Wang L., Meindl J.D.
Georgia Institute of Technology, US
Keywords: High-k material, MOSFET, quantum mechanical effects, short-channel effects
As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME is developed in this paper, and incorporated into the short-channel S model. This model gives close agreement with the numerical simulation down to 20 nm effective channel length. For the 20 nm MOSFET with the 0.5 nm EOT, QME lead to the increase of S from 74 mV/decade to105 mV/decade. The scaling limit of bulk MOSFET is calibrated based on two considerations: 1) short-channel effects controllability requiring the EOT reduction with technology generations to keep S
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 167 - 170
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Nanoparticle Synthesis & Applications
ISBN: 0-9767985-3-0