unified regional modeling (URM) – TechConnect Briefs

Compact Model Characteristics for Generic MIS-HEMTs

Zhou H.T., Zhou X., Chiah S.B., Syamal B., Zhou H.T., Zhou X., Ajaykumar A., Liu X., Nanyang Technological University, SG

III-V channel field-effect transistors (FETs), such as metal–insulator–semiconductor high electron-mobility transistors (MIS-HEMTs), have emerged as promising candidates for future generation high-frequency, high-voltage, and high-power applications. Development of a compact model for generic HEMTs in III-V/Si [...]

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Zhou X., Nanyang Technological University, SG

This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]

Xsim: Benchmark Tests for the Unified DG/GAA MOSFET Compact Model

Zhou X., Zhu G.J., Srikanth M.K., Lin S-H, Chen Z.H., Zhang J.B., Wei C.Q., Yan Y.F., Selvakumar R., Nanyang Technological University, SG

This paper presents benchmark tests of the unified compact model (Xsim) for double-gate (DG) and gate-all-around (GAA) silicon-nanowire (SiNW) MOSFETs, which has been developed over the years with the unified regional modeling (URM) approach. The [...]