traps – TechConnect Briefs

Trap-induced apparent linearity of CNTFETs (invited)

Haferlach M., Claus M., TU Dresden, DE

Compared to conventional bulk semiconductors carbon nanotubes (CNTs) possess a number of properties which may make CNT technology superior for certain applications. In particular, the one-dimensional (1D) transport in CNTs leads not only to a [...]

Low frequencies anomalies in GaAs FETs

Iqbal M.A., University of the Punjab, PK

The activation energy and capture cross section of the traps founds in GaAs field Effect transistors (GaAs FETS) have been measured both in ohmic and saturation region. A variety of transients found using frequency dispersion, [...]

Single Election Trapping in Nanoscale Transistors; RTS(Random Telegraph Signals) and l/f Noise

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

Random telegraph signal, RTS, noise[1] is most obvious in submicron devices with traps, for example in nanoscale MOS transistors, MOSFET’s, with a low number of carriers. RTS is sometimes an indicator of poor device quality [...]