transient enhanced diffusion – TechConnect Briefs

Atomistic Simulation on Boron Transient Diffusion during in Pre-amorphized Silicon Substrate

Park S.Y., Cho B-G, Won T., Inha University, KR

We investigated the boron diffusion in the silicon posterior to PAI (pre-amorphization implant) in order to understand the mechanism for amorphization process and generation-recombnation of defects. Silicon atoms were weighed as a new pre-amorphization implant [...]

Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes

Dunham S.T., Boston University, US

In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large [...]