technology development – TechConnect Briefs

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]

A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization

Zhou X., Chiah S.B., Lim K.Y., Nanyang Technological University, SG

This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), [...]

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Zhou X., Nanyang Technological University, SG

This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing [...]