A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements
Rao R.V.V.V.J., Joe J., Chia Y.W.M., Ang K.S., Wang H., Ng G.I., National University of Singapore, SG
A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]