random traps – TechConnect Briefs

Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants and a Single Random Interface Trap for 45 nm N-MOSFET as Predicted by Ensemble Monte Carlo Simulation and Existing Analytical Model Expressions

Ashraf N., Vasileska D., Arizona State University, US

Comparative analysis of analytical model and full Ensemble Monte Carlo simulation which takes into account both the short-range and the long-range coulomb interaction in the presence of random dopants and random traps is performed.

Monte Carlo Simulation of Impact of Random Telegraph Noise in 45 nm MOSFET Due to Coupled Effects of Random Interface and Oxide Traps With Random Channel Dopant Distributions

Ashraf N.S., Vasileska D., Ma Z., Arizona State University, US

This paper presents a 3-D Ensemble Monte Carlo ( EMC ) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability [...]