quantum dots – Page 9 – TechConnect Briefs

Quantum Dots/Conductive Polymer Nanocomposite

Chen C-M, Chen H-S, Huang H-C, Chen C-M, Chen H-S, ITRI, TW

The nanocomposite composed of CdSe quantum dots and conductive polymer (MDMO-PPV) was investigated. The spherical 3.8-nm functionalized CdSe quantum dots were synthesized by colloidal chemical method. The conductive polymer MDMO-PPV was synthesized from 1-methoxyl-4-(3,7dimethyl-octanoxyl)benzene and [...]

Modeling of Brillouin Spectrum of a Quantum Dot Crystal

Lazarenkova O.L., Balandin A.A., University of California Riverside, US

Model for simulation of the Brillouin spectra of three-dimensional regimented array of GeSi quantum dots in Si is proposed. We consider the low-energy part of the Raman spectrum that is determined by the transformed modes [...]

Numerical Simulations of Residual Stresses and Their Effects on Electronic Properties in Quantum Dots

Vlahovic B., Suslov V., Wang K., North Carolina Central University, US

A finite element method has been utilized to simulate the residual stress distributions in the quantum dots. Both lattice mismatch and thermal expansion effects are included. Our calculation indicates that the residual stresses concentrate at [...]

Growth of InAs Quantum Dots Using the Strained Superlattices and Their Optical Properties

Leem J-Y, Choi H-K, Jeon M.H., Lee J.W., Leem J-Y, Cho G.S., Choi H-K, Department of Optical Engineering, KR

we have studied the growth of self-assembled quantum dots (QDs) using Stranski-Krastanow growth mode and strain-reducing layers for long-wavelength applications with narrow linewidth in photoluminescence (PL) emission. InAs QDs were grown on the strained superlattices, [...]

Structural and Morphological Transformations in Self-Assembled Sn Quantum Dots in Si Matrix

Moeck P., Lei Y., Topuria T., Browning N.D., Ragan R., Min K.S., Atwater H.A., Portland State University, US

Transmission electron microcopy (TEM) in both the parallel illumination and scanning probe mode (i.e. STEM) has revealed morphological and structural transformations in self-assembled II-VI, III-V and group IV semiconductor quantum dots (QDs). These transformations result [...]

Size Effects and Scaling in Misfit Dislocation Formation in Self Assembled Quantum Dots

Friedman L.H., Weygand D.M., van der Giessen E., University of Groningen, NL

Growth islands due to large mismatch strain arising in Stranski-Krastanow (SK) and Volmer-Weber (VW) ﬁlm growth can be used to produce large arrays of quantum dots. This same mismatch strain may also cause misﬁt dislocations [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Residual Stress Modeling in Quantum Dots

Vlahovic B., Wang K., Suslov V., Yakovlev S.L., Otieno C., Soldi A., Dutta J., North Carolina Central University, US

One of the possible applications of the quantum dots is in a new generation of photovoltaic cells. Theory predicts the efficiency of these based solar cells to be up to 63 percent, which is substantially [...]

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US

Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

Akis R., Vasileska D., Ferry D.K., Arizona State University, US

A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under [...]