process modeling – TechConnect Briefs

Computations on Encapsulations of Lanthanides into C74

Slanina Z., Nagase S., Institute for Molecular Science, JP

While the empty C74 fullerene has still not been available, various related C74-based metallofullerenes have been known and studied vigorously like Ca@C74, Sm@C74, Sr@C74, Ba@C74, La@C74, Eu@C74, Yb@C74, Sc2@C74 or Er3@C74. This contributions will deal [...]

A Comprehensive Kinetic Model for Wet Oxidation of Silicon Germanium Alloys

Rabie M.A., Haddara Y.M., Carette J., McMaster University, CA

Our objective is to study the kinetics of SiGe oxidation with a view to studying factors that would improve the quality of the oxide. We propose a model based on the simultaneous oxidation of both [...]

Modeling of Germanium/Silicon Interdiffusion in Silicon/Silicon Germanium/Silicon Single Quantum Well Structures

Hasanuzzaman M., Haddara Y.M., McMaster University, CA

Intermixing at heterointerfaces and the broadening of the SiGe layer in a Si/SiGe/Si single quantum well (SQW) structure can be detrimental to device performance. Thus it is important to develop predictive models for interdiffusion phenomena [...]

DOPDEES/PMM: A System for Portable Model Description

Gencer A.H., Dunham S.T., Boston University, US

We have developed a multi-purpose partial differential equation solver, DOPDEES, which is capable of solving initial value problems in one spatial dimension using a finite differences method. The system of partial fferential equations is specified [...]

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

Kapila D., Kulkarni M., Fernando C., Davis J., Vasanth K., Pollack G., Texas Instruments, Inc., US

In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles [...]

Yield Prediction Under Non-Standard Data Distributions

Rao S., Saxena S., Apte P., Mozumder P.K., Davis J., Burch R., Vasanth K., Texas Instruments, Inc., US

The trend towards smaller feature sizes has increased the need to accurately characterize the distribution of process and device responses to predict and improve yield [1]. The usual approach to characterization assumes that the response [...]