piezoresistance – TechConnect Briefs

Development of Aligned Carbon Nanotubes (CNTs) for Pressure Sensing Application

Mohamed N.M., Lai M.K., Begam K.M., University Technology PETRONAS, MY

The paper reports on the investigation of using aligned carbon nanotubes (CNTs) as the pressure sensing element. Besides the unique advantages of high sensitivity, small size, low power consumption, and strong mechanical stability, the driving [...]

MEMS Simulation in Heavily Doped Silicon Devices

Matsuda K., Kanda Y., Naruto University of Education, US

Simulation of the semiconductor transport under heavily doped and stressed conditions is presented. The degenerate statistics are introduced by taking into account the density-of-state functions for the band tail and the impurity band. The momentum-dependent [...]

Simulation for Low Temperature Coefficient Design of Piezoresistive and Hall Sensors

Matsuda K., Kanda Y., Naruto University of Education, JP

Simulation for the temperature coefficient of piezoresistive and Hall sensors is presented. Carrier and ionized impurity concentrations in the n-type silicon gage are calculated from the charge balance equation by applying Newton iteration scheme. The [...]

Simulation of Silicon Piezoresistive Sensors

Matsuda K., Kanda Y., Toyo University, JP

The temperature infiuence of the heavy doped silicon piezoresistive sensors is simulated. In this simulation, the density of state functions for impurity band and band edge tail are taken into account for carrier and ionized [...]