nonvolatile memory – TechConnect Briefs

Synthesis of Cobalt-based Nanoparticles in Silicon Dioxide for Nonvolatile Memory Applications

Yoon J-H, Kangwon National University, KR

In this study, we report the direct growth of cobalt (Co) silicide nanocrystals (NCs) by thermally annealing of a simple sandwich structure consisting of an ultrathin Co layer sandwiched between two silicon-rich oxide (SiOx) layers, [...]

A Novel Nonvolatile Memory Using SiOx-Cladded Si Quantum Dots

Velampati R.S., Jain F.C., University of Connecticut, US

This paper presents characteristics of a novel quantum dot gate nonvolatile memory (QDNVM) whose threshold shift can be varied by adjusting the duration and magnitude of the Programming Voltage pulse applied at the drain end. [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Transient Simulation of Ferroelectric Hysteresis

Dragosits K., Hagenbeck R., Selberherr S., Technical University of Vienna, AT

We present amodel that allows the analysis of the behavior of ferroelectric materials in a wide range of frequencies. A common approach to the transient properties of dielectrics based on differential equations was extended by [...]

Numeric Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis

Dragosits K., Selberherr S., TU Vienna, AT

Simulation of ferroelectric hysteresis allows the analysis of nonvolatile memory cells which are based on ferroelectric materials. We give an overview of our algorithm for the calculation of effects caused by field rotation. Implementation of [...]