nanoscale double gate SOI MOSFETs

Compact Model for Short Channel Effects in Source/Drain Engineered Nanoscale Double Gate (DG) SOI MOSFETs

Kranti A., Armstrong G.A., Queen’s University of Belfast, UK

In the present paper, a compact model for short channel effects (SCEs) in source/drain engineered nanoscale DG MOSFET, is proposed for the first time and the impact of spacer width (s), lateral source/drain doping gradient [...]