Random Dopant Fluctuation in 10-nm-Gate Multi-Channel Gate-All-Around Nanowire Field Effect Transistors
This paper, for the first time, studies the random dopant fluctuation (RDF) in the 10-nm-gate multi-channel gate-all-around nanowire field-effect transistors (FETs). To characterize device’s physical and electrical characteristic fluctuation, a 3D statistically atomistic approach to [...]