Monte Carlo simulation – Page 2

Kinetic Monte Carolo Simulation of Thin Film Growth with Void Formation – Application to via Filling

Hiwatari Y., Kaneko Y., Ohara K., Murakami T., Kanazawa University, JP

In this paper, we study the void formation during via ﬁlling as a model of copper damascene plating for LSI interconnects. We developed a new model for crystal growth which enables us to study the [...]

An Effective Potential Method for Including Quantum Effects Into the Simulation of Ultra-Short and Ultra-Narrow Channel MOSFETs

Akis R., Milicic S., Ferry D.K., Vasileska D., Arizone State University, US

Quantum effects are known to occur in the channel region of MOSFET devices, in which the carriers are confined in a triangular potential well at the semiconductor-oxide interface. Typically, these effects are quantified by a [...]

Monte Carlo Simulation Study of Mechanical Properties of Au Nanowires

Tanimori S., Shimamura S., Yamaguchi University, JP

We have carried out Monte Carlo simulations of elongation and shear of Au nanowires to investigate their mechanical properties. We have followed stable atomic arrangements in the nanowires during deformation. The Morse potential has been [...]

Simulation of Porous Si and SiOx Layer Growth

Burlakov V.M., Sutton A.P., Briggs G.A.D., Tsukahara Y., University of Oxford, UK

Monte Carlo simulation of deposition of amorphous SiOx layer on a polymer surface is reported. The model developed is based on the network properties of silica and takes into account dangling bonds arising during the [...]

Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation

Hössinger A., Selberherr S., TU Vienna, AT

We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well [...]

Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon

Son M-S., Hwang H-J., Chung-Ang University, KR

In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. [...]