l/f noise – TechConnect Briefs

Single Election Trapping in Nanoscale Transistors; RTS(Random Telegraph Signals) and l/f Noise

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

Random telegraph signal, RTS, noise[1] is most obvious in submicron devices with traps, for example in nanoscale MOS transistors, MOSFET’s, with a low number of carriers. RTS is sometimes an indicator of poor device quality [...]

1/f Noise and RTS(Random Telegraph Signal) Errors in Comparators and Sense Amplifiers

Forbes L., Miller D.A., Poocharoen P., Oregon State University, US

An analysis has previously been made of the increasing portion of the threshold voltage being occupied by thermal noise levels and the bit error rates in digital logic[1] and memory circuits [2-4]. This analysis has [...]

1/f Noise and RTS(Random Telegraph Signals) and Read Errors in Nanoscale Memories

Forbes L., Miller D.A., Louie M.Y., Oregon State University, US

The use of charge storage on nanoscale particles has been realized in silicon integrated circuit memories [1,2] and utilized in commercial products[2]. An analysis has previously been made of the increasing portion of the threshold [...]