k.p. theory – TechConnect Briefs

Energy-Band Structure of Strained Indirect Gap Semiconductor: A k . p Method

Cavassilas N., Aniel F., Fishman G., CNRS, FR

A strain Hamiltonian Hst, associated with a sps* k.p Hamiltonian Hkp is used to descibe the valence band and the first two conduction bands of a strained indirect semiconductor. Hst takes into accoutn the Bir-Pikus [...]

Capacitance-Voltage Characteristics of Metal-Oxide-Strained Semiconductor Si/SiGe Heterostructures

Cavassilas N., Autran J-L, CNRS, FR

We present theoretical investigation of mechanical strain-induced effects in metal-oxide-semiconductor (MOS) structures from an electrical point-of-view. In this work, we start by calculating the strained semiconductor band-structure using a k.p approach over the complete Brillouin [...]