InAs/GaAs – TechConnect Briefs

Spin-orbit Interaction and Energy States in Nanoscale Semiconductor Quantum Rings

Li Y., Natl Nano Device Labs & Natl Chiao Tung Univ, TW

We investigate the effect of spin-orbit interaction on the electron energy states in nanoscale semiconductor quantum rings. The effective one-band Hamiltonian approximation with the spin-dependent Ben Daniel-Duke boundary conditions is formulated and solved numerically. Due [...]

InAs/GaAs Quantum Ring in Energy Dependent Quasi Particle Effective Mass Approximation

Filikhin I., Suslov V.M., Deyneka E., Vlahovic B., North Carolina Central University, US

Considered is three-dimensional In/As quantum ring using energy dependent quasi-particle-effective-mass approximation. This model was first used by Y. Li et al. (Y. Li, O. Voskoboynikov, C.P. Lee, 2002 Technical Proceedings of International Conference on Modeling [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]

Computer Simulation of Electron Energy States for Three-Dimensional InAs/GaAs Semiconductor Quantum Rings

Li Y., Voskoboynikov O., Lee C.P., National Nano Device Laboratories, TW

In this article we study the electron energy states for three-dimensional (3D) semiconductor quantum rings. Our model formulation includes: (i) the effective one-band Hamiltonian approximation, (ii) the position and energy dependent quasi-particle effective mass approximation, [...]