InAs – TechConnect Briefs

InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

Tang X.H., Yin Z.Y., Zhao J.H., Sentosa D., NTU, SG

InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been [...]

Scanning Probe Lithography on InAs Substrate

Houlet L.F., Yamaguchi H., Hirayama Y., NTT Basic Research Laboratories, NTT Corporation, JP

In this study, we focus our interest on patterning a conventional electron beam resist by electron field emission exposure using Atomic Force Microscope (AFM). We have fabricated 50-140 nm deep structures in InAs with the [...]

Growth of InAs Quantum Dots Using the Strained Superlattices and Their Optical Properties

Leem J-Y, Choi H-K, Jeon M.H., Lee J.W., Leem J-Y, Cho G.S., Choi H-K, Department of Optical Engineering, KR

we have studied the growth of self-assembled quantum dots (QDs) using Stranski-Krastanow growth mode and strain-reducing layers for long-wavelength applications with narrow linewidth in photoluminescence (PL) emission. InAs QDs were grown on the strained superlattices, [...]