InAs Quantum Dots Grown by MOCVD for Mid-infrared Emission

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InAs quantum dots grown on InGaAs.InP matrix by MOCVD has been studied. Formation of the InAs QDs with different growth conditions has been investigated. Using a two-step growth method, high density, uniform QDs have been grown. The emission of the QDs has been measured. The emission wavelength of the QDs reaches 2.3 um at 77K.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 145 - 148
Industry sector: Advanced Materials & Manufacturing
Topic: Advanced Manufacturing
ISBN: 0-9767985-8-1