Unified Regional Charge-based MOSFET Model Calibration
See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Pandey S.M., Cheng M., Chu S., Hsia L.-C., Nanyang Technological University, SG
This paper presents a methodology to extract device physical parameters, i.e., electrical oxide thickness (tox), channel doping (Nch), and poly-gate doping (Ngate), as well as smoothing parameters in our unified regional charge-based model [1] with [...]