hot electrons – TechConnect Briefs

Nano-mapping Material Interfaces via Hot Electrons

Goh K.E.J., Troadec C., Institute of Materials Research and Engineering, SG

As devices shrink below 100 nm in size, nanoscale imperfections (due to defects and doping) at material interfaces become significant perturbations to ideal device characteristics and in some cases can dominate the device behavior. Of [...]

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Morris H.C., DePass M.M., Abebe H., San Jose State University, US

Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

Squeezed Electrons in GaN Quantum Wells

Ridley B.K., Zakhleniuk N.A., Bennett C.R., University of Essex, UK

We present an analytic theory of hot-electron transport in a GaN quantum well containing a large-enough electron concentration for strong electron-electron scattering to establish a drifted distribution. Novel behaviour includes the squeezed electron distribution and [...]