gate engineering – TechConnect Briefs

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]