FET – Page 2 – TechConnect Briefs

Carbon Nanotube Transistors with 60mV/decade Switching and its Capacitance Measurement

Lu Y., Dai H., Nishi Y., Stanford University, US

Recently, we have been able to approach the ultimate vertical scaling limit of carbon nanotube field effect transistors (FETs) and reliably achieve S ~ 60 mV/decade at room temperature, by non-covalent functionalization of single walled [...]

Compact Model for Ultra-Short Channel Four-Terminal DG MOSFETs for Exploring Circuit Characteristics

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology (AIST), JP

We have proposed a compact model of the DG MOSFETs which handles two gates independently. The model can simulate the DG MOSFETs of asymmetric gate design, together with their four-terminal operation. In this report, we [...]

A Schrödinger-Poisson Solver for Modeling Carbon Nanotube FETs

John D.L., Castro L.C., Pereira P.J.S., Pulfrey D.L., Department of Electrical and Computer Engineering, CA

Carbon nanotubes are attracting great interest for their use in nanoscale electronic devices. Recent modeling efforts of carbon nanotube field-effect transistors (CNFETs) have been successful in examining the subthreshold behaviour of these devices through a [...]

Improved Compact Model for Four-Terminal DG MOSFETs

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology, JP

Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]

A Scheme for Electrical Detection of Single Electron Spin Resonance

Martin I., Mozyrsky D., Jiang H.W., Los Alamos National Laboratory, US

We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped [...]

Development of an FET Pressure Sensor Model and used to Predict Sensor Behaviour as a Function of Electrode Geometry

Hynes E., Elebert P., O'Neill M., Berney H., Lane W.A., Kelly G., Hill M., Analog Devices, IR

This paper presents the development and solution of a model to describe the behaviour of a surface micromachined FET pressure sensor. Initially an expression is developed to describe the radial deflection of the sensing diaphragm [...]