Low Field Electron Mobility in Ultra-Thin Strained-Si Directly on Insulator MOSFET in Sub-0.1µm Regime
A 200 word (or less) text only summThe fabrication of Fully-Depleted strained-Si directly on insulator (SSOI) MOSFET was recently demonstrated. The combination of strain-induced transport property with the scaling advantage of ultra-thin body devices is [...]