EUVL – TechConnect Briefs

The first Italian micro exposure tool for EUV lithography: design guidelines and experimental results

Flora F., Bollanti S., Di Lazzaro P., Mezi L., Murra D., Torre A., ENEA, IT

The first Italian Micro Exposure Tool (MET) for EUV lithography has been developed at the ENEA Research Laboratories in Frascati (Italy). In spite of the very low cost of the Schwarzschild optics, the specific design [...]

A Fully Coulpled Computational Model of the Silylation Process

Winters W.S., Evans G.H., Prantil V.C., Larson R.S., Sandia National Laboratories, US

This paper describes a fully coupled computational model of the positive tone silylation process. The model is two-dimensional and transient and focuses on the part of the lithography process in which crosslinked and uncrosslinked resist [...]