drain-induced charge enhancement

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs

Fossum J.G., Chouksey S., University of Florida, US

Saturation-region effects, unique to double-gate (DG) MOSFETs, are discussed and modeled in UFDG. The effects include carrier velocity overshoot and drain-induced charge enhancement (DICE). The former, modeled in terms of carrier temperature, implies ballistic-like currents [...]