double-gate transistor – TechConnect Briefs

An Analytical Subthreshold Current Model for Ballistic Double-Gate MOSFETs

Autran J-L, Munteanu D., Tintori O., Aubert M., Decarre E., CNRS, FR

An analytical subthreshold model of ultra-thin double-gate MOSFETs working in the ballistic regime is presented. The present approach captures the essential physics of such ultimate DG devices (quantum confinement, thermionic current) and introduces two main [...]