A New Continuous Model for Deep Submicron MOSFETs
Chan K-M.S., Wong N-C.A., Wong S-C., Chao C-J., Kao D-B., Wong N-C.A., Wong S-C., Yang C.Y., Winbond Electronics Corporation America, US
A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical [...]