CMP – TechConnect Briefs

Development of Device-Level Chemical-Mechanical Polishing Simulation Module Using Cellular Automata Method

Yeh H.-M., Chen K.-S., National Cheng Kung University, TW

This work briefly presents the basic theory, the development, and a primary demonstration of a device-level chemical-Mechanical Polishing (CMP) CAD module. By integrating the phenomenological material removing relation such as Preston’s equation, contact mechanics, finite [...]

Micromachined Force Sensors for Characterization of Chemical Mechanical Polishing

Gauthier D., Mueller A., White R., Manno V., Rogers C., Anjur S., Moinpour M., Tufts University, US

Two types of microscale sensors are being developed to take in situ measurements of forces induced during chemical mechanical polishing. Flexible post sensors have been demonstrated, and floating element sensors are under development. Both sensors [...]

A New Copper Electrodeposition Scheme to Reduce Void Defects after Chemical Mechanical Polishing

Lin J.Y., Wang Y.Y., Wan C.C., Wang Y.Y., National Tsing Hua University, TW

Deposition of highly (111) oriented conductive layer is required for achieving better electromigration resistance and lower resistivity. Moreover, the amount of void defects decreases as the (111)/(200) ratio increases in CMP process. Hence, we investigated [...]

Investigation of the Behaviors of Various Electroplated Copper films during CMP

Feng H.P., Cheng M.Y., Wang Y.Y., Wan C.C., Wang Y.Y., National Tsing Hua University, TW

The behaviors of various electroplated copper films during CMP are important for removal mechanism and defect generation. This article was to study the characteristics of various copper films during CMP, including impurity effect and current [...]

Direct Wafer Polishing with 5 nm Diamond

Sung J.C-M, Tai M-F, Kinik Company, TW

CMP for making future semiconductor chips with nanom (nano meter) feature sizes can be accomplished by using nanom diamond particles embedded in an organic matrix (e.g. epoxy). Such nanom diamond particles are derived from the [...]

Cermet Ceramic Coating on Diamond Dresser for In-Situ Dressing of Chemical Mechanical Planarization

Sung J.C-M, Kan K., Kinik Company, TW

In recent years, copper circuitry has been replacing aluminum wires and tungsten via as the dominant interconnections. The polishing of copper circuitry requires using highly acidic solution (e.g. pH = 4) and with strong oxidizing [...]

Nanoparticle Dispersions for Polishing Applications

Murray P.G., Nanophase Technologies Corporation, US

Increasingly, improvements in surface roughness and planarity are being sought in a variety of technologically advanced polishing applications related to the electronics industry. From the production of photomask blanks to the fabrication of microelectronic memory [...]