Improved Compact Model for Four-Terminal DG MOSFETs
Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., Suzuki E., Koike H., National Institute of Advanced Industrial Science and Technology, JP
Double-gate field-effect transistors are promising device structures which have excellent scalability. To evaluate merits of DG MODFETs, we developed a compact four-terminal DG MOSFET model by adopting the double charge-sheet model. In this presentation, we [...]