asymmetric gate stack – TechConnect Briefs

Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

Kaur H., Kabra S., Haldar S., Gupta R.S., University of Delhi, IN

In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads [...]