Using ‘Adaptive Resurf’ Technique and Field Plate Working to Improve the Safe Operating Area of n-type Drain Extended MOS Transistors
Using TCAD, an n-type DEMOS (Drain Extended MOS) has been developed in a standard 0:35 mCMOS technology. The devices are optimised towards a Safe Operating Area (SOA) of 60 - 65 V using an n-type [...]