Zhang L.N. – TechConnect Briefs

Computation Efficient yet Accurate Surface Potential Based Analytic Model for Symmetric DG MOSFETs to Predict Current-Voltage Characteristics

Song Y., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Zhuang H., Che Y.C., He J., Chan M., Peking University, CN

A computation efficient yet accurate surface potential-based analytic model for the symmetric double-gate MOSFETs is proposed to simulate double-gate device current-voltage characteristics in this paper. This model consists of a surface potential versus voltage input [...]

Analytic MOSFET Surface Potential Model with Inclusion of Poly-Gate Accumulation, Depletion, and Inversion Effects

Song Y., He J., Zhang J., Zhang L.N., Zhang J., Zhang L.N., Peking University, CN

An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, and inversion effects is derived from the basic MOS device physics and its solution result is also discussed in this paper. By [...]