Yu Z. – Page 2 – TechConnect Briefs

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Zhang D., Yu Z., Tian L., Tsinghua University, CN

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the [...]

Using Ultra-long Nanotubes to Make Identical CNT FETs

Yu Z., Rutherglen C., Li S., Burke P.J., University of California Irvine, US

Centimeter scale aligned carbon nanotube arrays are grown from nanoparticle/metal catalyst pads. We find the nanotubes grow both with and “against the wind”. A metal underlayer provides in-situ electrical contact to these long nanotubes with [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN

As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

Automatic Differentiation Technique in Device Model Parameter Extraction

Cheng B., Shao Z., Wang L., Tang T., Yu Z., Xi'an Jiaotong University, CN

Automatic Differentiation (AD), based on the nonstandard analysis theory, is a new technique in computer numerical analysis. An AD based algorithm for device model parameter extraction is presented. Using this algorithm, the constrained parameter extraction [...]