Yan Z. – TechConnect Briefs

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Yan Z., Zhu J., Wang Y., Lin X., He J., Peking University, CN

A new numerical method is proposed to study nonlinear response of two-dimensional electron plasmas in the channel of field effect transistor structures. The numerical simulations are not only in accordance with the existing theory, but [...]

Nonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field

Zhu J., Yan Z., Wang Y., Lin X., He J., Peking University, CN

Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is [...]

Numerical Simulation on Nonlinear Response of Two-Dimensional Electron Plasmas in the Field Effect Transistor Structures

Yan Z., Zhu J., Wang Y., Lin X., He J., Peking University, CN

A new numerical method is proposed to study nonlinear response of two-dimensional electron plasmas in the channel of field effect transistor structures. The numerical simulations are not only in accordance with the existing theory, but [...]