Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography
Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P., Groupe de Physique des Matériaux, FR
The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.