On the Modeling of the Current-Voltage Characteristics of a Symmetrical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with an Undoped Body
Three general classes of solutions are needed to model an arbitrary double-gate (DG) metal-oxide-semiconductor (MOS) capacitor with arbitrary bias conditions. The “zero-field” (F0) and the “zero-potential” (P0) solution regimes are separated by the “zero-field and [...]