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HomeAuthorsVenkataraman V.

Authors: Venkataraman V.

Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETs

Nawal S., Venkataraman V., Kumar M.J., Indian Institute of Technology, IN
A simplae compact model for the threshold voltage of Strained Si/SiGe MOSFET is reported for the first time. This model accurately predicts the effects of Ge content and other device parameters on threshold voltage. The [...]

A New Grounded Lamination Gate (GLG) SOI MOSFET for Diminished Fringe Capacitance Effects

Kumar M.J., Venkataraman V., Gupta S.K., Indian Institute of Technology, IN
In this paper, we propose a novel device structure, known as the Grounded Laminated Gate (GLG) SOI MOSFET to eliminate the gate fringe field effects on the threshold voltage of short channel SOI MOSFETs. Our [...]

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