A Practical Method to Extract Extrinsic Parameters for the Silicon MOSFET Small-Signal Model
Wang S.C., Huang G.W., Chen K.M., Peng A.S., Tseng H.C., Hsu T.L., National Nano Device Laboratories, TW
In this paper, the substrate parasitic has been added into the conventional MOSFET small-signal model for RFIC applications, and an extraction approach based on the curve-fitting method proposed by S. Lee also has been developed [...]