Unipolar resistive switching and current flow mechanism in thin film SnO2
Talukdar A., Almeida S., Mireles J., MacDonald E., Pierluissi J.H., Garcia E., Zubia D., University of Texas at El Paso, US
Non-volatile memories play a very important role in modern day electronics. In harsh environments such as space and weapons systems, radiation-hardness is an essential requirement. Radiation-hardening-by-design is an effective solution which is based on redundancy [...]