Stilling M. – TechConnect Briefs

First-principles Modeling of Magnetic Memory Components — Preliminary Results on the Effects of Interface Oxides

Stilling M., Stokbro K., Flensberg K., Atomistix, DK

Magnetotunnel junctions (MTJs), exhibiting high tunneling magnetoresistance (TMR), are currently being employed in new generations of hard disk drive (HDD) read heads and novel magnetic random access memory (MRAM) technology. We have modeled such spintronic [...]

Crystalline Magnetotunnel Junctions: Fe-MgO-Fe, Fe-FeOMgO-Fe and Fe-AuMgOAu-Fe

Stilling M., Stokbro K., Flensberg K., Copenhagen University, DK

The dimension of electronic devices is rapidly scaling down, and the ratio between surface and bulk atoms therefore increasing. This has the consequence that the interfaces between different parts of the device start to have [...]