Sirotkin V. – TechConnect Briefs

The IMPRINT software: quantitative prediction of process parameters for successful nanoimprint lithography

Kehagias N., Reboud V., Sotomayor Torres C.M., Sirotkin V., Svintsov A., Zaitsev S., IMT RAS, RU

A homogeneous residual layer thickness in nanoimprint lithography (NIL) can be achieved by optimizing the NIL stamp geometry (the distribution of cavities and protrusions, the stamp cavities depth and the stamp thickness) as well as [...]

UV-NIL with optimal droplets

Sirotkin V., Svintsov A., Zaitsev S., IMT RAS, RU

A homogeneous residual layer thickness in nanoimprint lithography (NIL) is a serious problem in step and flash (UV-)NIL. Improvement of thickness homogeneity could be expected from optimized size of droplets at resist dispensing in case [...]

Refined coarse-grain modeling of stamp deformation in nanoimprint lithography

Merino S., Retolaza A., Juarros A., Schift H., Sirotkin V., Svintsov A., Zaitsev S., IMT RAS, RU

The inhomogeneous distribution of the residual layer thickness is a vital issue in nanoimprint lithography (NIL). Using the simulation of NIL, this problem can be alleviated by optimizing the stamp geometry and by choosing process [...]