Schott C. – TechConnect Briefs

Analytical Study of Vertical Hall (VH)-Devices Using an Adapted Conform Mapping Technique

Besse P.A., Schott C., Popovic R.S., EPFL, CH

We adapt the conforrn mapping technique to the analytical calculation of two dimensional vertical Hall (VH)-devices with five electrical contacts. With our new method the finite size of the two output current electrodes is taken [...]

2D Nonlinearity Simulation of the Vertical Hall Sensor Using SESES

Schott C., Randjelovic Z., Waser J-M, Popovic R.S., EPFL, CH

Buried silicon vertical Hall devices have been accurately simulated in 2D under the condition of a varying magnetic field up to 2 Tesla using the numerical FEM device simulator SESESTM. A field dependent Hall scattering [...]