Satoh Y. – TechConnect Briefs

Simulation of Buffer Current Effects on Breakdown Voltage in AlGaN/GaN HEMTs Having Passivation Layers with Different Permittivity

Satoh Y., Hanawa H., Horio K., Shibaura Institute of Technology, JP

It is well known that the introduction of filed plate enhances the breakdown voltage in AlGaN/GaN HEMTs. This is because the electric field at the drain edge of the gate is reduced. However, the field [...]

Simulation of Current Slump Removal in Field-Plate GaAs MESFETs

Nomoto A., Satoh Y., Horio K., Shibaura Institute of Technology, JP

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that [...]

Simulation of High-k Passivation-Layer Effects on Breakdown Voltage in AlGaN/GaN HEMTs

Hanawa H., Satoh Y., Horio K., Shibaura Institute of Technology, JP

A two-dimensional analysis of breakdown characteristics in AlGaN/GaN high-electron-mobility transistors (HEMTs) is performed by considering a deep donor and a deep acceptor in a buffer layer. The dependence of an off-state breakdown voltage on the [...]