Characterization of Ion Implantation in Si Using Infrared Spectroscopy with a Lock-In common-Mode-Rejection Demodulation
B+, P+, and As+ ion-implanted Si wafers in the implantation dose range 1x1011 - 1x1013 ions/cm2 were characterized using Photothermal Radiometry (PTR). A comparison between the conventional frequency scan and a new technique called Common-Mode-Rejection [...]