Rao V.R. – TechConnect Briefs

Closed Form Current and Conductance Model for Symmetric Double-Gate MOSFETs using Field-dependent Mobility and Body Doping

Hariharan V., Thakker R., Patil M.B., Vasi J., Rao V.R., IIT Bombay, IN

In this paper we present a completely closed-form inversion charge-based model for the drain current and conductance of a symmetric double-gate MOSFET based on the drift-diffusion transport mechanism, that takes into account vertical field mobility [...]

Simulation Study of Non-Quasi Static Behaviour of MOS Transistors

Kumar D.V., Thakker R.A., Patil M.B., Rao V.R., Indian Institute of Technology - Bombay, IN

In this paper, we study the "non-quasi static" (NQS) behaviour of MOS transistors using an exact quasi static Look-up Table (LUT) [1] MOSFET model implemented in a general-purpose circuit simulator SEQUEL [2], device simulator ISE-TCAD [...]