Palankovski V. – TechConnect Briefs

Performance Study of Nitride-Based Gunn Diodes

Aloise G., Vitanov S., Palankovski V., Advanced Material and Device Analysis Group, AT

In this work, we assess the performance of InN Gunn diodes, as a superior alternative to GaN. We perform two-dimensional mixed-mode device/circuit simulation accounting for self-heating effects. We verify available theoretical results for GaN-based Gunn [...]

A Physically-Based Electron Mobility Model for Strained Si Devices

Dhar S., Kosina H., Palankovski V., Ungersboeck E., Selberherr S., TU Vienna, AT

A model describing the mobility tensor for electrons in strained Si layers as a function of strain is presented. It includes the effect of strain-induced splitting of the conduction band valleys in Si, inter-valley scattering, [...]

A New Analytical Energy Relaxation Time Model for Device Simulation

Palankovski V., Kosina H., Hernandez A., Selberherr S., TU Vienna, AT

We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed [...]