Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor
Narang R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN
Tunnel FET working on the principle of band-to-band tunneling mechanism has come up as a promising candidate with advantages of going below the limitation of 60mV/decade sub-threshold slope, and lower leakage current and thus capable [...]