HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies
Miura-Mattausch M., Ueno H., Mattausch J.H., Miura-Mattausch M., Kumashiro S., Yamaguchi T., Yamashita K., Nakayama N., Hiroshima University, JP
Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, [...]