Murali R. – TechConnect Briefs

Modeling Process Variations Using a Compact Model

Murali R., Meindl J.D., Georgia Tech, US

Inclusion of manufacturing variations has become an important part of static timing analysis. Existing statistical timing analysis methods involve the use of time-consuming circuit simulations or use fit polynomials. Previous efforts at modeling parameter variations [...]

Fabrication of Bowtie Nano-Gap Structures by Electron Beam Lithography

Murali R., Walters E., Zaman F., Tabor C., Huang W., El-Sayed M., Meindl J.D., Georgia Tech, US

Metallic nano-particle pairs in close proximity to one another display surface-enhanced raman scattering (SERS). Single-molecule detection has been predicted to be possible thanks to SERS. The SERS enhancement is due an induced localized electric field [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]